S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects

S-parameters degradation of hot-carrier stressed n-MOS transistors can be explained by the transconductance and miller capacitance shifts, which are resulted from the interface state generation (traps), which results in a build up of negative charge at Si/SiO2 interface. More interface states are created due to a located maximum impact ionization rate at the gate edge. From our experimental results, hot electron induced RF performance degradation should be taken into consideration in the design of the power RF MOS devices.