Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences

► We use a simple model Sakurai-Newton model to model a 90 nm NMOSFET. ► This model can well present the effect of hot carrier injection. ► This model can well present DC offset of drain current induced by EMI coupling on transistor terminals. ► We study the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences.