کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6947312 | 1450551 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The sensitivity of stress-induced-voiding to structural layouts is investigated using Finite Element Modeling and is validated experimentally. A method is proposed to quantify the stress gradient and has been applied to different structural layouts at different temperatures. It is shown that different temperature ranges need to be addressed for stress-induced-voiding storage tests on structures with varying layouts. Experimental results do not show failures at temperatures outside these range which agree well with the modeling results. Also our modeling predicts higher stress gradients for structures with VIA's positioned in the middle of metal planes compared to those with VIA's positioned at the edge of such plane.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 51, Issues 9â11, SeptemberâNovember 2011, Pages 1578-1581
Journal: Microelectronics Reliability - Volume 51, Issues 9â11, SeptemberâNovember 2011, Pages 1578-1581
نویسندگان
M. Lofrano, K. Croes, I. De Wolf, C.J. Wilson,