کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6947318 1450551 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of irregular geometries on low-k dielectric breakdown
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Impact of irregular geometries on low-k dielectric breakdown
چکیده انگلیسی
Backend geometries on chips contain a wide variety of features. We are developing a full-chip reliability simulator for low-k dielectric breakdown that takes into account the vulnerable area, linewidth, vias, and line edge roughness. The simulator provides a link between test structure results and predictions of chip dielectric lifetime. However, these factors may not be sufficient for large chips with a wider variety of features. In this paper, we analyze data from backend dielectric test structures with irregular geometries to determine if more layout features need to be added to a full-chip reliability simulator for low-k dielectric breakdown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 51, Issues 9–11, September–November 2011, Pages 1582-1586
نویسندگان
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