Measurement and simulation of interfacial adhesion strength between SiO2 thin film and III-V material

► The adhesion strength between SiO2 and GaP was measured by four-point bend test. ► The modified virtual crack closure technique was used in finite element analysis. ► The predicted G value was compared and identical with experiment results. ► Interfacial strengths in the SiO2/GaP and SiO2/GaAs are weaker than the others.