A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices

► In this study we observe ageing mechanisms of the metallisation layer deposited on the chips of power semiconductor devices. ► We also study the effect of aluminium metallisation degradation on electrical performances of a power transistor. ► The resistance of the metallization layer is measured during ageing process. ► Increase in the metallisation resistance is linked to the degradation of the aluminium layer.