کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7061977 | 1459423 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of Ni3Sn4 growth dynamics in Ni-Sn TLPS bonding process by differential scanning calorimetry
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
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چکیده انگلیسی
Transient liquid phase sintering (TLPS) bonding process is a promising packaging process for the new generation semiconductor devices. In this paper, the dynamics of Ni-Sn TLPS bonding is researched. The melting enthalpy and the residual rate of Sn in the simulative and actual bonding process were measured by differential scanning calorimetry. Based on this, the radius of residual Ni particle and thickness of Ni3Sn4 compound were further calculated. The results show that when the initial average radius of Ni particle is 6.5â¯Î¼m, after holding for 60â¯min and 240â¯min at 300â¯Â°C, the thickness of Ni3Sn4 is about 4.28â¯Î¼m and 6.14â¯Î¼m separately. The thickness Îr of Ni3Sn4 in the simulative bonding process shows a linear relationship as t0.308, i.e. Îrâ¯=â¯1.17t0.308, which is in agreement with that in the actual bonding layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thermochimica Acta - Volume 663, 10 May 2018, Pages 53-57
Journal: Thermochimica Acta - Volume 663, 10 May 2018, Pages 53-57
نویسندگان
Hongliang Feng, Jihua Huang, Xianwen Peng, Zhiwei Lv, Yue Wang, Jian Yang, Shuhai Chen, Xingke Zhao,