کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7138191 1461914 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
DEMUX devices based on a-SiC:H
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
DEMUX devices based on a-SiC:H
چکیده انگلیسی
The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 186, October 2012, Pages 143-147
نویسندگان
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