Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

- A high performance high density vertically stacked SiNW FET structure has been electrically characterized for biosensor applications.
- Structure has high drive currents 1.3 mA/μm (normalized to an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV).
- Excellent Ion/Ioff ratios >106.
- Steep subthreshold slopes down to SS < 75 mV/dec.
- High transconductances gm > 10 μS.