Optoelectronic correlations for gold thin films in different annealing temperature

The manufacturing, characterization, and modification of noble nanomaterials such as gold have recently drawn important attention because of their unique characteristics that make them useful in technological applications. In some cases, we need special bulk properties in small objects or some properties should be eliminated in that scale and we must modify them. The mainstream of this project is to decrease surface resistance at an effective annealing temperature and to provide a comparable correlation between surface resistance and surface plasmon resonance (SPR) in gold thin films. Our experiments clearly explain the well-known dependence of optical and electrical properties of gold thin films on annealing temperature. A relation between absorption spectrum and electrical surface resistance in gold thin films have been found. It is understood that annealing temperature of 300° centigrade is a more reduction of surface resistance due to increasing of island size and participating more electrons in conduction band; In this time, the electrical resistance in nanoscale is tended to bulk resistance and plasmon peak is entirely eliminated. The surface resistance is decreased from 50 MΩ to about 5 KΩ. The plasmon absorption peak showed a significant blueshift with increasing annealing temperature at 500° centigrade in comparison with the early sample (unannealed thin-film).