کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7223970 1470564 2018 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Theoretical design and performance of InxGa1-xN single junction solar cell
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Theoretical design and performance of InxGa1-xN single junction solar cell
چکیده انگلیسی
The insertion of optimized Window and a back surface field (BSF) layers on an InxGa1-xN p-n basic single junction (BSJ) solar cell is the chief reason behind the reduction of front and back recombination. In this context, this work is focused on the selection of the suitable parameters including the indium (In) content, thickness and doping concentration for the InxGa1-xN inserted layers, that gives the best photovoltaic performances. At this aim, numerical simulations were performed using the computational numerical modeling TCAD Silvaco-Atlas to design, optimize the InxGa1-xN BSJ and extract the above Window and BSF parameters that enhance the BSJ performances. A short circuit current density (Jsc) of 26.15mA/cm2, an open circuit voltage (Voc) value of 0.904V and a fill factor (FF) value of 79.67% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency η of 19.62%. Other parameters like the external quantum efficiency (EQE), electric field developed, the current density-voltage (J-V) and the power density-voltage (P-V) characteristics are also calculated and plotted for the designed solar cell.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 163, June 2018, Pages 22-32
نویسندگان
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