Polarization switching mechanism in surface-emitting semiconductor lasers

Within the scope of the earlier proposed approach to the description of polarization dependences in VCSEL based on analysis of the experimental and theoretical data, an explicit expression for the function describing the relationship between the amplification anisotropy and the current density is suggested. The conducted numerical calculations support the peculiarities of the polarization switching (PS) process and enable one to explain the effect of the PS point anomalous shift when the current variation rate is high. A special attention is given to a fairly clear physical interpretation of the formation of polarization radiation in VCSEL.