Proposal of InP/AlInGaAs single delta quantum well for fiber-optic communications

In this study, InP/AlGaInAs/delta-InGaAs single quantum well for fiber-optic communications is presented, proposed and compared to the free delta layer even structure. The Al and Ga content and the thickness layers are self-consistently optimized using genetic algorithm. It is found that the optimization of structure confirm an improvement in the electron and hole wave function overlap, which leads to a significant enhancement in TE-polarized optical gain at room temperature. In addition, the transparency carrier density is significantly reduced by the insertion of delta-InGaAs thin layer which can be a necessity for fiber-optic communications.