کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7224935 | 1470571 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electronic properties of Y doped ZnO with different Y concentration
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have performed a comprehensive calculation about the structures, energy band structures, total and partial density of states of Y doping ZnO with different concentration using the density-functional theory (DFT). The Y doping structures still maintain wurtzite configuration with the increasing of Y content. The research of formation energy shows that Y doping ZnO crystal is energetically stable, and the formation energies reduce with the increasing of Y molar content from 3.125% to 12.5%. The Y doping system exhibits direct band gap like pure ZnO. The Fermi level of doping ZnO crystal shifts upward into conduction, showing the properties of n-type semiconductor and the band gaps of Y doping are larger than that of pure ZnO. There exists a strong localized state at near 5Â eV in conduction band, which mainly comes from Y-4d states. The DOS of concentration 12.5% appears a new strong peak at near â24Â eV, which mainly originates from the Y-4p states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 156, March 2018, Pages 297-302
Journal: Optik - Volume 156, March 2018, Pages 297-302
نویسندگان
Jun-Qing Wen, Jian-Min Zhang, Zhi-Qin Li,