کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7225247 | 1470572 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and photo-stimulated characteristics of all-implanted CMOS compatible planar Si photodiode
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical and photo-stimulated characteristics of all-implanted CMOS compatible planar Si photodiode Electrical and photo-stimulated characteristics of all-implanted CMOS compatible planar Si photodiode](/preview/png/7225247.png)
چکیده انگلیسی
A scheme consisted of all-implantation processed planar silicon PIN Photodiode is fabricated and characterized to evaluate and optimise its potential for photo detection applications. Current Voltage, Capacitance Voltage and Photo-Simulated Internal Field Transient Characteristics are presented to check the compatibility of the design device with the CMOS manufacturing process routines, as well as the efficiency of the process. The effect of the variety of light intensities incident on the devices on the physical characteristic is also evaluated and analyzed. Presence of short-span photovoltaic effect is also witnessed in the transient analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 155, February 2018, Pages 297-300
Journal: Optik - Volume 155, February 2018, Pages 297-300
نویسندگان
W. Ahmad, S. Ahmed, M. Amjad, S. Akhtar, M. Ali,