کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
725533 892537 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Dependence of discharge path on breakdown characteristic of tunneling magnetroresistive read heads
چکیده انگلیسی
The dependence of discharge path on the breakdown of a TMR head was performed by using human body model in 4 cases; R+ → R− (1st), R− → R+ (2nd), R+ → ground (3rd) and R− → ground (4th). It is seen by using the TMR read head equivalent circuit that, at first, the 1st and 3rd, and the 2nd and 4th, cases present an intrinsic and extrinsic breakdown, respectively. A potential difference across the substrate is thought to cause a different breakdown mechanism. Dependence of voltage polarity across the TMR sensor on asymmetry parameter is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electrostatics - Volume 68, Issue 6, December 2010, Pages 503-507
نویسندگان
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