کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
730097 | 892952 | 2012 | 6 صفحه PDF | دانلود رایگان |

The thin films of the organic semiconductor material Copper Phthalocyanine (CuPc) and metal Aluminum (Al) were deposited in a sequence by vacuum thermal evaporation technique on glass substrate with Silver (Ag) as source and drain electrodes. The effect of displacement on properties of the fabricated Organic Field Effect Transistor (OFET) was investigated. It was observed that the drain–source resistance of the OFET decreased eight times with the increase of the displacement in the range from 0 to 550 μm. The sensor was then connected to square wave oscillator. It was found that with the increase of displacement, the oscillator’s frequency also increased in the range of 3.3–11.0 kHz. This Displacement Sensitive Field Effect Transistor (DSFET) controlled oscillator can be used for short-range and long-range telemetry systems in the environmental monitoring and assessment. Moreover it has industrial applications too.
Journal: Measurement - Volume 45, Issue 1, January 2012, Pages 41–46