کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
731691 | 1461541 | 2007 | 7 صفحه PDF | دانلود رایگان |
This paper presents the design of a new 3-D Hall sensor compatible with standard silicon IC technology and optimization of its characteristics through originally realized amperometric scheme. This magnetic Hall effect sensor is intended to be fitted at the tip of a catheter for use in a magnetic-based navigation system for endovascular interventions. Unfortunately, at present the general feeling is that vector Hall sensors cannot be used for clinical trials, mainly because of their large size and low sensitivity. Proposed 3-D silicon Hall sensor has denied suspicions with its advantages: simultaneous on line 3-D measurement of the magnetic field components; high spatial resolution 150 μm × 150 μm × 100 μm; the lowest detected magnetic induction of the three output channels is about 15/20 μT; magnetosensitivities of the three channels at a supply current 10 mA reach 360 μA/T for Bx and By, 250 μA/T for Bz, respectively.
Journal: Measurement - Volume 40, Issues 9–10, November–December 2007, Pages 816–822