کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
732948 893296 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of current spreading for GaN-based light-emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Simulation of current spreading for GaN-based light-emitting diodes
چکیده انگلیسی

Uniform current spreading is crucial for the performance of light-emitting diodes (LEDs). It has been reported that the reliability and light distribution are affected by non-uniform current spreading. In this paper, the impact of different electrode patterns on the performance of LED chips is investigated. A hybrid modeling method is employed to analyze the electrical and thermal characteristics of LEDs with two different electrode mesa structures. Corresponding experiments are also carried out to validate the calculation results. It is found that increasing amount of p-electrodes in interdigitated electrode patterns is effective in improving the performance of LEDs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 42, Issue 5, July 2010, Pages 737–740
نویسندگان
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