Plasmon-induced-transparency in subwavelengthstructures

The slow light technology prompts the realization of the all-optical storage, by which one can store the information of different wavelengths at their corresponding locations. In this paper, we made a brief review of plasmon-induced-transparency (PIT) in subwavelength structures. The induction of PIT provides a reliable and easy implement way to achieve slow light transmission and optical storage on the nanometer scale. At the same time, the linewidth and position of the PIT can be adjusted by changing the parameters of materials and structures, rather than just depend on the atom level itself in Electromagnetically induced transparency (EIT). More importantly, it can also be integrated with semiconductor devices on the chip, which is an exciting expectation for optoelectronic integration. PIT technology can pave a new way to optical information processing.

► The PIT provides a reliable and easy implement way to achieve slow light.
► The PIT is adjusted by changing parameters rather than the atom level in EIT.
► It can be integrated with semiconductor devices on achip.