Characteristics analysis of dark current in quantum dot infrared photodetectors

Since the dark current of quantum dot infrared photodetectors (QDIPs) can bring about great influence on their performance, they have attracted more and more attention in recent years. In this paper, a dark current model of the QDIP including the common influence of the microscale and the nanoscale electron transport is further verified at different temperatures, moreover, with account taken of the dependence of the drift velocity of electrons on the applied electrical field. The main concern is to discuss the influence of QDIPs parameters on the dark current characteristics, such as the applied electrical field, operation temperatures, two electrons transport (microscale and nanoscale), and different material performance (mobility of electrons, effective mass of electrons, and saturation velocity of electrons), respectively. The reasons for the influence of each performance parameters on the dark current are investigated in detail. The calculated and simulated results show that the dark current model has an excellent agreement with the experimental data, and the research on the influence of each parameter on dark current can guide the design and improve the performance of the QDIP.

► A dark current model of QDIP is further verified at different temperatures.
► The characteristics of the dark current with different parameters are analyzed.
► The reason for the influence on dark current of QDIP is investigated.
► Theoretical guidance for pursuing the high performance of QDIP is proposed.