Laser singulation of thin wafer: Die strength and surface roughness analysis of 80 μm silicon dice

In this paper, we have studied the characteristics of silicon dice, singulated using a high-power-high-repetition-rate femtosecond laser. The die strength and surface roughness, of the die side walls, are evaluated for different laser parameters such as pulsewidth and repetition rate. Since, the 80-μm-thick wafers used in this study were polished on both sides, die-edge roughness plays a decisive factor in determining the die strength when compared to backside roughness and wafer thickness as is the case in other studies. Excellent side wall average surface roughness of 0.35 μm is obtained at pulsewidth of 214 fs and repetition rate of 4.33 MHz using an average laser power of 15.5 W. Die strength is measured via the 3-point bending test. Strength reduction, due to die side wall surface defects that are induced through the wafer dicing process, is evaluated through die strength and surface roughness analysis. Die strength of a silicon dice is characterized as the first step in prediction and prevention of die failure during the package assembly, reliability test and working life. Improvement in the die side wall surface roughness is observed with the usage of nitrogen gas assist as compared to that obtained in air.