کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
735575 893629 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaluation of probe lasers employed in optical diagnostics for phase transformation of thin films during excimer laser crystallization
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Evaluation of probe lasers employed in optical diagnostics for phase transformation of thin films during excimer laser crystallization
چکیده انگلیسی

The stability and reliability of probe laser is an important factor affecting the inspection of the phase transformation process of Si thin films during excimer laser crystallization using in-situ time-resolved optical measurements. The changes in 2D intensity profile, peak power density, and beam wander of the commonly used helium–neon (He–Ne) and diode laser are investigated experimentally. It is found that the peak power density of He–Ne laser is higher than that of diode laser, while the total power of He–Ne laser is lower than that of diode laser. Although the instability in the peak power density of He–Ne laser will increase with increasing the operation time, the beam stability of He–Ne laser is better than that of diode laser. For long-time operation (>24 h) of optical measurements, the diode laser is a good candidate of probe laser. Conversely, the diode laser is suitable for the short-time operation (<24 h) of optical measurements because the beam-wander is higher than that of He–Ne laser.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 46, Issue 6, June 2008, Pages 440–445
نویسندگان
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