کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
736425 | 893862 | 2011 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires1 that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042 ± 0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0 ± 1.7 GPa to 7.5 ± 3.4 GPa. Failure modes included clamp failure, transverse (nanowire c-plane) fractures, and insufficient force from the MEMS test actuator.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 166, Issue 2, April 2011, Pages 177–186
Journal: Sensors and Actuators A: Physical - Volume 166, Issue 2, April 2011, Pages 177–186
نویسندگان
J.J. Brown, A.I. Baca, K.A. Bertness, D.A. Dikin, R.S. Ruoff, V.M. Bright,