Polysilicon nanofilm pressure sensor

Utilizing 80 nm polysilicon nanofilm as piezoresistors, a pressure sensor with high performance is developed. The complete fabrication process is described. The pressure properties of the sensor were measured at the temperature from 0 to 200 °C. For 0.6 MPa full scale pressure, the sensitivity is 23.00 mV/V/MPa at 0 °C and 18.27 mV/V/MPa at 200 °C, the temperature coefficient of sensitivity (TCS) is about −0.098%/ °C without any compensation. The temperature coefficient of offset (TCO) is about −0.017%/ °C. Because of the good piezoresistive and temperature characteristics of polysilicon nanofilm, the pressure sensor demonstrates a better performance.