Thick PZT layers deposited by gas flow sputtering

Polycrystalline lead zirconate titanate (PZT) thin films in the range of 3–16 μm were crack free deposited on silicon substrates in a high rate gas flow sputtering process. Gas flow sputtering uses the hollow cathode effect which results into high deposition rates of about 200–250 nm/min (1 1 1) textured platinum was used as bottom electrode to assist the nucleation of PZT.Material properties of the thin films like topography, morphology, chemical composition, and structure as well as the electrical- and electromechanical properties are evaluated. The sputtered PZT layers show a high relative permittivity ɛr between 1000 and 1800 and a distinct ferroelectric hysteresis with a remnant polarisation of 17 μC/cm2 and a coercive field strength of 5.4 kV/mm. Piezoelectric coefficients d33 of about 27.3–79.7 pm/V were observed.