Sample temperature profile during the excimer laser annealing of silicon nanoparticles

• We modeled the temperature profile of silicon nanoparticles during laser annealing.
• Determined the silicon nanoparticles thermal conductivity and melting point.Validated our model to Raman and Electrochemical capacitance–voltage measurements.

Based on the heat diffusion equation we describe the temperature profile of a silicon nanoparticle thin film on silicon during excimer laser annealing using COMSOL Multiphysics. For this purpose system specific material parameters are determined such as the silicon nanoparticle melting point at 1683 K, the surface reflectivity at 248 nm of 20% and the nanoparticle thermal conductivity between 0.3 and 1.2 W/m K. To validate our model, the simulation results are compared to experimental data obtained by Raman spectroscopy, SEM microscopy and electrochemical capacitance–voltage measurements (ECV). The experimental data are in good agreement with our theoretical findings and support the validity of the model.