کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
741547 894247 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NOx sensing properties of In2O3 thin films grown by MOCVD
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
NOx sensing properties of In2O3 thin films grown by MOCVD
چکیده انگلیسی

The NOx and O2 sensing properties of highly textured indium oxide In2O3 thin films grown by metal organic chemical vapor deposition (MOCVD) technique have been investigated as a function of the operation temperature and partial pressure. The sensor is very sensitive to NOx and its response is strongly dependent on the gas partial pressure and operating temperature. The responses to NOx and O2 have been found to be maximal at 150 °C. The optimum detection temperature for NOx occurs in the range 150–200 °C considering the response and recovery times. In this range a very low response to O2 is observed indicating that the sensor is very suitable for selective NOx detection.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 129, Issue 1, 29 January 2008, Pages 467–472
نویسندگان
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