کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
743878 | 894371 | 2012 | 6 صفحه PDF | دانلود رایگان |

Undoped and Co-doped ZnO nanorod sensors were fabricated at a low temperature of about 90 °C. ZnO-based sensors exhibit fast response and high sensitivity. Co-doped ZnO sensors show improved sensitivity compared with undoped ZnO. The electrodeposition method is an economic, effective approach and suitable for large-scale production. This approach of adding impurity into semiconductor is effective in improving sensing property and can be applied to other semiconductors as well.
Undoped and Co-doped ZnO nanorod sensors were fabricated at 90 °C. By doping Co in ZnO, impurity energy levels are introduced. Therefore, the Fermi level of Co-doped ZnO moves closer toward conduction band than that without doping and produces a great deal of free electrons. Consequently, Co-doped ZnO nanorod sensors show superior sensitivity compared with undoped ZnO, when exposed to reduction gas.Figure optionsDownload as PowerPoint slide
Journal: Sensors and Actuators B: Chemical - Volume 161, Issue 1, 3 January 2012, Pages 734–739