کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
744097 894381 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection
چکیده انگلیسی

Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO2. Due to electron donation from SiC, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned for extremely sensitive NO2 detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n–p transition upon exposure to increasing concentrations of NO2 indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO2 making holes the majority carriers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 155, Issue 2, 20 July 2011, Pages 451–455
نویسندگان
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