کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
744830 894405 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Label-free detection of serum uric acid using novel high-k Sm2TiO5 membrane-based electrolyte–insulator–semiconductor
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Label-free detection of serum uric acid using novel high-k Sm2TiO5 membrane-based electrolyte–insulator–semiconductor
چکیده انگلیسی

In this study, we constructed a highly pH sensitive electrolyte–insulator–semiconductor (EIS) sensor with a layer of novel rare-earth metal-oxide, Sm2TiO5. This high-k membrane with a thickness of 40 nm was deposited on the Si substrate by using reactive cosputtering technique. The effect of annealing temperature on the structural properties and surface roughness of Sm2TiO5 membrane was investigated. Based on X-ray diffraction and atomic force microscopy data, it was found that high temperature annealing (900 °C) leads to the formation of crystalline oxide thin film with a rough surface. The pH sensing experiments of EIS with Sm2TiO5 membrane annealed at 900 °C shows that reference voltage is linearly dependent on solution pH and an average sensitivity of 60.5 mV/pH. This outstanding pH sensitivity may be attributed to the high surface roughness of oxide membrane. Furthermore, the EIS sensor with Sm2TiO5 membrane showed the great stability and no sign of sensitivity degradation within an operation time of 140 days. Finally, we successfully demonstrated the first example of the use of EIS with uricase-immobilized alginate film for the detection of uric acid in serum. The concentration of serum uric acid measured by EIS biosensor is comparable to that determined by commercial assay kit. This sensitive EIS based biosensor can potentially be served as the diagnosis tool for general clinical examinations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 146, Issue 1, 8 April 2010, Pages 342–348
نویسندگان
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