کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
744831 894405 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors
چکیده انگلیسی

The long-term stability of antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors for detecting botulinum toxin is reported in this study. The botulinum toxin sensor, which initially showed good data reproducibility and recyclability, was repeatedly tested over a 9-month period. The botulinum sensor was packaged and stored in phosphate buffered saline (PBS) at 4 °C in a refrigerator for long-term storage. The sensor was tested over time at room temperature and we found sensitivity losses of 2%, 12% and 28% after 3, 6 and 9 months, respectively. These results clearly demonstrate a significant step towards the realization of electronic detection of biomolecules by field-deployed sensor chips based on AlGaN/GaN HEMTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 146, Issue 1, 8 April 2010, Pages 349–352
نویسندگان
, , , , , , , ,