کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749755 | 894848 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Piezoelectric thin films for MEMS applications—A comparative study of PZT, 0.7PMN–0.3PT and 0.9PMN–0.1PT thin films grown on Si by r.f. magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
PMN–PT (0.7), PMN–PT (0.9) and PZT (54/46) thin films were deposited by sputtering on silicon substrate covered bottom TiOx/Pt electrodes. The top and lower electrodes are grown by r.f. sputtering. The objective in this paper here is to compare the dielectric, ferroelectric and piezoelectric properties of different materials, and material compositions, in thin films form. For these films the electric, ferroelectric and piezoelectric properties have been determined and compared to PZT films of the same thickness. The comprehensive characterization process clearly reveals the merits of each film composition for a particular application. The results for the three film compositions are presented and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 148, Issue 1, 4 November 2008, Pages 122–128
Journal: Sensors and Actuators A: Physical - Volume 148, Issue 1, 4 November 2008, Pages 122–128
نویسندگان
Romain Herdier, M. Detalle, David Jenkins, Caroline Soyer, Denis Remiens,