کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
750111 | 1461935 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Parasitic leakage resonance-free HRS MEMS package for microwave and millimeter-wave
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
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چکیده انگلیسی
A high resisitivity silicon (HRS, 10 kΩ cm) micro electro mechanical system (MEMS) package using a lightly-doped silicon (Si) chip carrier for coplanar waveguide (CPW) microwave and millimeter-wave integrated circuits (MMICs) is proposed in order to reduce parasitic problems of leakage, coupling, and resonance. The proposed chip carrier scheme is verified by fabricating and measuring a HRS CPW and a package on three types of carriers (conductor-backed metal, lightly-doped Si, and HRS) in the frequency range from 0.5 to 40 GHz. The proposed MEMS package using the lightly-doped (15 Ω cm) Si chip carrier and the HRS package shows the low loss and no parasitic leakage resonance since the lightly-doped Si chip carrier effectively absorbs and suppresses the parasitic leakage resonance. The HRS MEMS package for a CPW MMIC has an insertion loss (S21) of 2.0 dB and a power loss (PL) of 6.0 dB up to 40 GHz, while the insertion loss of a half feed-through package is less than 0.9 dB up to 40 GHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volumes 130â131, 14 August 2006, Pages 83-90
Journal: Sensors and Actuators A: Physical - Volumes 130â131, 14 August 2006, Pages 83-90
نویسندگان
Yo-Tak Song, Hai-Young Lee, Masayoshi Esashi,