Pyroelectric infrared sensors with fast response time and high sensitivity using epitaxial Pb(Zr, Ti)O3 films on epitaxial γ-Al2O3/Si substrates

In this paper, we report that a pyroelectric infrared (IR) sensor with fast response time and high sensitivity using epitaxial Pb(Zr, Ti)O3 (PZT) thin films on epitaxial γ-Al2O3/Si substrates has successfully fabricated for the first time. The fabricated sensor operated under chopping frequency of 100 Hz. The values of output signals were 1.6, 0.8 and 0.5 mVp–p with the chopping frequencies of 20, 50 and 100 Hz, respectively. This sensor will have potentials for Si integrated sensing systems and compared with pyroelectric IR sensors using MgO substrates.