Doped armchair germanene nanoribbon exhibiting negative differential resistance and analysing its nano-FET performance

The variation in electronic properties of p-type doped and n-type doped armchair germanene nanoribbon (AGeNR) with respect to pristine AGeNR (Fig. a and b) is observed. The I-V characteristics of each p-type doped AGeNR (Ga: gallium, In: Indium, Tl: Thallium) is shown (Fig. c) which shows negative differential resistances. Indium (In) atom doped AGeNR based device with high dielectric constant hafnium dioxide (HfO2 = 25) is used for formation of field effect transistor and its FET performance are analysed.352