کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7833139 1503517 2018 26 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation mechanism of inverted pyramid from sub-micro to micro scale on c-Si surface by metal assisted chemical etching temperature
ترجمه فارسی عنوان
مکانیزم تشکیل هرم هرمی از زیر میکرو تا میکرو مقیاس بر روی سطح سی-سی با استفاده از فلزکاری دمای اچینگ شیمیایی
کلمات کلیدی
اثر دما، هرم معکوس، ساخت کنترل تله نور مؤثر، مکانیزم تشکیل
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
Since challenges still exist in size control fabrication of inverted pyramids (IPs) on c-Si substrate, size difference of IPs among reported literatures still can not be explained reasonably. Here, formation mechanism of IPs from sub-micro scale to micro scale for light trapping on c-Si substrate is reported based on metal assisted chemical etching (MACE) temperature control for the first time. The formation of the IPs is realized through a mask-less Ag assisted wet chemical etching method followed by a post nanostructure rebuilding (NSR) process. It is found that the etching directions on (1 0 0) Si can be influenced by the MACE temperature due to the shrink of Ag nanoparticles at high MACE temperature, leaving behind few pore channels in the deepest region of black silicon layer as nucleation sites. Thus large IPs can be formed during the following NSR process. It is believed that the elucidation of the fundamental formation will speed up the fabrication of wafer-scale c-Si IPs for application in bulk and ultrathin c-Si solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 455, 15 October 2018, Pages 283-294
نویسندگان
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