کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7833142 | 1503516 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of Cu2S thin films by atomic layer deposition using Cu(dmamb)2 and H2S
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, atomic layer deposition (ALD) of Cu2S was explored using bis(dimethylamino-2-methyl-2-butoxy)copper(II) and 5% H2S combination as Cu and S sources, respectively. The reaction resulted in a high growth rate of â¼0.22-0.24â¯nm/cycle at 150-200â¯Â°C owing to the high reactivity of the Cu precursor. At all investigated temperatures, Cu2S films with Cu oxidation state of +1 were obtained with negligible impurity levels. It was revealed that stoichiometric Cu2S films could be deposited at 120-150â¯Â°C, while sulfur deficient films was formed at 200â¯Â°C. Cu2S ALD process at low temperatures of 100-120â¯Â°C resulted in continuous film formation while the higher deposition temperatures of >150â¯Â°C led to island formation. Cu2S films showed p-type electrical characteristic with high hole concentrations of 4â¯Ãâ¯1019-1021â¯cmâ3 and Hall mobility of 2â¯cm2/vs. Lastly, the as-deposited Cu2S films exhibited an optical band gap of 1.2â¯eV which widened upon prolonged surface oxidation and in addition displayed NIR intra-band absorption.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 456, 31 October 2018, Pages 501-506
Journal: Applied Surface Science - Volume 456, 31 October 2018, Pages 501-506
نویسندگان
Raphael Edem Agbenyeke, Bo Keun Park, Taek-Mo Chung, Chang Gyoun Kim, Jeong Hwan Han,