کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7833228 1503517 2018 23 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature solution-processed IGZO thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Low temperature solution-processed IGZO thin-film transistors
چکیده انگلیسی
We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm2 V−1 s−1, low subthreshold swing of 0.22 V/decade, and high on/off ratio of 106 at 300 °C processing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 455, 15 October 2018, Pages 554-560
نویسندگان
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