10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.