کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7834995 | 1503530 | 2018 | 37 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
GaAsSbN dilute nitrides are potential candidates for integration in high-performance multi-junction solar cells due to the bandgap tunability in the 1.0-1.15â¯eV range and the possibility to match the lattice constant to the GaAs substrates. Recently, the use of GaAsSb/GaAsN superlattices (SLs) has been shown as an effective way to enhance photovoltaic efficiency as compared to the quaternary counterparts. Here we apply a combination of HR-XRD and cross-sectional (S)TEM techniques together with theoretical calculations to analyse the compositional distribution in GaAsSb/GaAsN SLs with different periodicity. The measurements of compositional profiles indicate that Sb is strongly segregated into the GaAsN layers while N remains confined where it is deposited. We demonstrate that the Sb profiles run as a shark-fin waveform that can be precisely described with a one-dimensional model where segregation of the supplied Sb is promoted by a three-layer fluid exchange mechanism. Moreover, the role played by the periodicity in the effectiveness of the Sb incorporation adds a new level of complexity. The modelling of Sb segregation in the GaAsSb/GaAsN SLs system could be used to carry out more precise pseudopotential calculations on the band structure in order to understand and predict their electrical and optical behaviour.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 442, 1 June 2018, Pages 664-672
Journal: Applied Surface Science - Volume 442, 1 June 2018, Pages 664-672
نویسندگان
D.F. Reyes, V. Braza, A. Gonzalo, A.D. Utrilla, J.M. Ulloa, T. Ben, D. González,