Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer

Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 440, 15 May 2018, Pages 107-112

Ye Tao, Wentao Ding, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Xuhong Li, Weizhen Liu, Jiangang Ma, Yichun Liu,