Surface reconstruction switching induced by tensile stress of DB steps: From Ba/Si(0 0 1)-2×3 to Ba/Si(0 0 1)-4° off-3×2

Surface reconstruction switching induced by tensile stress of DB steps: From Ba/Si(0 0 1)-2×3 to Ba/Si(0 0 1)-4° off-3×2

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 439, 1 May 2018, Pages 122-127

Hidong Kim, Altaibaatar Lkhagvasuren, Rui Zhang, Jae M. Seo,