کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7835939 | 1503537 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09âPa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)â¥MgO (110) with Cu2O (001)â¥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56âeV obtained for the 0.09âPa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09âPa had the lowest resistivity of 6.67âΩâcm and highest Hall mobility of 23.75âcm2âvâ1âsâ1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 435, 30 March 2018, Pages 305-311
Journal: Applied Surface Science - Volume 435, 30 March 2018, Pages 305-311
نویسندگان
Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng, Aimin Song,