Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates

Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 436, 1 April 2018, Pages 887-892

Housei Akazawa,