Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 433, 1 March 2018, Pages 530-534

Lei Yuan, Hongpeng Zhang, Renxu Jia, Lixin Guo, Yimen Zhang, Yuming Zhang,