Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems

Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 669, March 2018, Pages 45-49

Kirill A. Lozovoy, Andrey P. Kokhanenko, Alexander V. Voitsekhovskii,