کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7897635 | 1510119 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High pressure growth and electron transport properties of superconducting SmFeAsO1âxHx single crystals
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
We report the single crystal growth and characterization of the highest Tc iron-based superconductor SmFeAsO1âxHx. Some sub-millimeter-sized crystals were grown using the mixture flux of Na3As + 3NaH + As at 3.0 GPa and 1473 K. The chemical composition analyses confirmed 10% substitution of hydrogen for the oxygen site (x = 0.10), however, the structural analyses suggested that the obtained crystal forms a multi-domain structure. By using the FIB technique we fabricated the single domain SmFeAsO0.9H0.10 crystal with the Tc of 42 K, and revealed the metallic conduction in in-plane (Ïab), while semiconducting in the out-of-plane (Ïc). From the in-plane Hall coefficient measurements, we confirmed that the dominant carrier of SmFeAsO0.9H0.10 crystal is an electron, and the hydride ion occupied at the site of the oxygen ion effectively supplies a carrier electron per iron following the equation: O2â â Hâ + eâ.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Asian Ceramic Societies - Volume 5, Issue 3, September 2017, Pages 357-363
Journal: Journal of Asian Ceramic Societies - Volume 5, Issue 3, September 2017, Pages 357-363
نویسندگان
Soshi Iimura, Takashi Muramoto, Satoru Fujitsu, Satoru Matsuishi, Hideo Hosono,