کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7898529 | 1510137 | 2018 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deposition of SiC/Si coatings in a microwave plasma-assisted spouted bed reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Silicon carbide (SiC) layers were deposited onto alumina particles in a microwave plasma-assisted spouted bed reactor using methyltrichlorosilane (MTS) and hydrogen mixtures, in argon, as precursor gas feed. The operating parameters studied were enthalpy, gas composition, and pressure. Microwaves were guided from a generator, operating at 2.45 GHz, along a rectangular waveguide intersecting a quartz tube, acting as the reaction zone. A graphite nozzle at the bottom of the tube facilitated the spouting action. Growth rates varied from 50 to 140 μm/h. Overall results indicate that the optimal region for SiC deposition requires relatively high enthalpy (â¼5 MJ/kg) and pressure (>â60 kPa) conditions, with hydrogen-to-MTS ratios â¼5:1. The quality (i.e. crystallinity, particle size, Si/C ratios) of the layers improve at these conditions, at the cost of decreased deposition rates. Characterisation was done by XRD, FTIR, XPS, SEM, TEM and EDX, which assisted in developing colour and morphological charts to indicate the changes as a function of changing operating parameters. A microwave plasma spouted bed reactor is demonstrated to be a viable alternative technique for SiC layer deposition onto microspheres.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 38, Issue 4, April 2018, Pages 1197-1209
Journal: Journal of the European Ceramic Society - Volume 38, Issue 4, April 2018, Pages 1197-1209
نویسندگان
J.H. van Laar, H. Bissett, J.C. Barry, I.J. van der Walt, P.L. Crouse,