Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering

► GaAs films with high dose of Ti incorporated have been obtained by R.F. sputtering. ► The evolution of Ga molar fraction suggests a possible substitution of Ga by Ti. ► XRD measurements reveal the presence of a new phase structure. ► The XPS measurement only reveals Tiδ + species. ► The presence of Ti affects the Etauc trend depending on the deposition conditions.